منابع مشابه
Report on EUV resist and process limitations
EUV lithography (λ=13.4nm) has been identified as one of the technologies likely to succeed to 193nm lithography for the definition of ever-smaller transistor architectures. Whether EUV in the end will outrank competing technologies for the 32nm and 22nm nodes (Hyper NA immersion, maskless, nanoimprint) and whether EUV will make it to mass production of integrated circuits will depend on both E...
متن کاملRecent Progress of EUV Resist Technology in EIDEC
EUV lithography is one of the promising technologies for manufacturing devices at 16 nm half-pitch node and below. EUV resists are required to improve the resolution, line width roughness (LWR), and sensitivity. However it is generally thought that the lithographic performance is determined by the trade-off relationship among these factors. Moreover, resist outgassing is another issue with EUV ...
متن کاملModeling of EUV photoresists with a resist point spread function
Extreme ultraviolet (EUV) lithography is under development for possible deployment at the 32-nm technology node. One active area of research in this field is the development of photoresists that can meet the stringent requirements (high resolution, high sensitivity, low LER, etc.) of lithography in this regime. In order to facilitate research in this and other areas related to EUV lithography, ...
متن کاملPhysics of Outgassing
This paper relates the physical bases of the gassing phenomena in ultra-high vacuum. The main phenomena discussed are: diffusion of gases through system walls and solids in vacuum, solubility of gases on solids and permeation as well as the phenomena of adsorption, desorption and absorption.
متن کاملNanometer-Scale Patterning on PMMA Resist by Force Microscopy Lithography
Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the ...
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2001
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.14.555